33LV408 SRAM, 4 Megabit (512K x 8-Bit), Low Voltage CMOS				33LV408 Information - Product Datasheet - Product Flow - Back to Memory

Features

• RAD-PAK® Technology radiation-hardened against natural space radiation
• 524,288 x 8 bit organization
• Total dose hardness:
  • > 100 krad (Si), depending upon space mission
• Excellent Single Event Effect
  • SELTH : > 68 MeV/mg/cm 2
  • SEUTH : = 3 MeV/mg/cm 2
  • SEU saturated cross section: 6E-9 cm 2 /bit
• Package:
  • 32-Pin RAD-PAK® flat pack
• Fast access time:
  • 20, 25, 30 ns maximum times available
• Single 3.3 Volt power supply
• Fully static operation
  • No clock or refresh required
• Three state outputs
• TTL compatible inputs and outputs
• Low power:
  • Standby: 60 mA (TTL); 5 mA (CMOS)

Description

Maxwell Technologies’ 33LV0408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33LV0408 realizes a high density, high performance, and low power consumption. Its fully static design eliminates the need for external clocks, while the CMOS circuitry reduces power consumption and provides higher reliability. The 33LV0408 is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention. The 33LV0408 features the same advanced 512K x 8-bit SRAM, high-speed, and low-power demand as the commercial counterpart.

Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.