89LV1632 SRAM, 16 Megabit (512K x 32-Bit), Low Voltage MCM SRAM				89LV1632 Information - Product Datasheet - Product Flow - Back to Memory

Features

• Four 512k x 8 SRAM architecture
• RAD-PAK® technology hardens against natural space radiation technology
• Total dose hardness:
  • 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
  • SEL > 101MeV-cm2/mg
  • SEU threshold = 3 MeV-cm2/mg
  • SEU saturated cross section: 8E-9 cm2/bit
• Package: 68-pin quad flat package
• Completely static memory - no clock or timing strobe required
• Internal bypass capacitor
• High-speed silicon-gate CMOS technology
• 3.3 V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible

Description

Maxwell Technologies’ 89LV1632 high-performance 16 Megabit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad(Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package. With high-performance silicon-gate CMOS technology, the 89LV1632 reduces power consumption and eliminates the need for external clocks or timing strobes. It is equipped with output enable (OE) and four byte enable (CS1 - CS4) inputs to allow greater system flexibility. When OE input is high, the output is forced to high impedance.

Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. In a GEO orbit, RAD-PAK® packaging provides true greater than 100 krad(Si) total radiation dose tolerance, dependent upon space mission. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or a space mission. This product is available in Class H or Class K packaging and screening.